Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...

Reduction of threading defects in GaN grown on vicinal SiC„0001... by molecular-beam epitaxy

Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...

Growth of GaN on porous SiC by molecular beam epitaxy

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...